K4A8G085WC-BCTD vs MT40A1G8SA-075:E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics at MT40A1G8SA-075:E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | K4A8G085WC-BCTD | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Uri ng Memory | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| Organisasyon | 1G x 8 | — |
| Rate ng Data | 2666 Mbps (PC4-2133) | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | 1.2V ±60mV |
| Packhaging | 78-ball FBGA (78FBGA) | 78-FBGA (7.5x11 mm) |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | Supported |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Uri ng Interface | Synchronous, parallel | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Laki ng Memory | — | 8Gbit (1G x 8) |
| Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| Data Mask Function | — | Supported |