K4A8G085WC-BIWE vs MT40A512M16JY-07EAIT:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BIWE sa pamamagitan ng Samsung Electronics at MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WC-BIWE | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 1G x 8 | 512M x 16 |
| Rate ng Data | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C | -40°C to +105°C (AIT grade) |
| Packhaging | 78-FBGA | 96-FBGA (8x14) |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | POD-12 | Parallel |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensya ng CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Laki ng Memory | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |