K4A8G165WB-BCTD vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCTD | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | — |
| Rate ng Data | 2666 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | -40C to +95C |
| Packhaging | 96FBGA | 96-ball FBGA (PBGA96) |
| Die Generation | B-die | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | Parallel (DDR4 SDRAM bus) |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | Yes |
| Dynamic On-Die Termination | Supported | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Tindminan RoHS | Compliant (per JLCPCB listing: ROHS) | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |