K4B4G1646D-BMK0 vs K4B4G1646D-BCK00 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BMK0 sa pamamagitan ng Samsung Electronics at K4B4G1646D-BCK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4B4G1646D-BMK0 K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung

K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung

K4B4G1646D-BMK0 ✓ Nakahanda
Samsung Electronics
K4B4G1646D-BCK00 K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BCK00 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K4B4G1646D-BMK0 K4B4G1646D-BCK00
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Density 4 Gb 4 Gb
Organisasyon 256M x 16 256M x 16
Speed Grade 1600 Mbps (PC3L-12800) DDR3-1600 (800 MHz)
Voltage 1.35 V —
Temperature na Operasyon -40°C to 95°C 0°C to 95°C (Tcase)
Packhaging 96FBGA (TFBGA) 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Uri ng Memory DDR3L SDRAM DDR3L SDRAM
Die Version D-die —
Lead-Free Yes Yes
Wala sa Halogen Yes Yes
RoHS Compliant Yes —
Number of Terminals 96 —
Package Code TFBGA —
Number of Functions 1 —
Rate ng Data 1600 Mbps 1600 Mbps/pin
Volte ng Pagbibigay — 1.35V (1.283V to 1.45V)
I/O Voltage — 1.35V
Number of Banks — 8
Latensya ng CAS — 11 (at 1600 Mbps)
Burst Length — 8, 4 (with burst chop)
RoHS — Compliant

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