K4B4G1646E-BCMA vs K4B4G1646F-BYK0 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BCMA sa pamamagitan ng Samsung Electronics at K4B4G1646F-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4B4G1646E-BCMA K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung

K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung

K4B4G1646E-BCMA ✓ Nakahanda
Samsung Electronics
K4B4G1646F-BYK0 K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646F-BYK0 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K4B4G1646E-BCMA K4B4G1646F-BYK0
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $3.77 —
Uri ng Memory DDR3 SDRAM DDR3L SDRAM
Density 4 Gbit —
Organisasyon 256M x 16 —
Clock / Data Rate 1066 MHz / 1066 Mbps per data pin —
Volte ng Pagbibigay 1.425 V to 1.575 V (1.5 V nominal) 1.35V / 1.5V
Temperature na Operasyon 0C to +95C 0°C to 95°C (TC)
Packhaging FBGA-96 (7.5 x 13.3 mm) 96-ball FBGA
Operating Supply Current (IDD) 55 mA —
Standby Current 2 mA —
Auto Precharge Yes Yes
Asynchronous Reset Yes —
On-Die Termination (ODT) Dynamic ODT supported —
ZQ Calibration Yes Yes
Data Mask Function Yes —
Uri ng Pagpapasok Surface Mount (BGA) —
Tindminan RoHS Compliant —
Laki ng Memory — 4 Gb
Memory Organization — 256M x 16
Rate ng Data — 1866 Mbps
Clock Frequency — 933 MHz
Interface — Parallel
Burst Length — 8 and 4
Latensya ng CAS — Programmable
On-Die Termination — Yes
Self-Refresh — Yes
RoHS — Compliant

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