K4RBH086VB-BCQK vs K4RAH165VB-BCQK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RBH086VB-BCQK sa pamamagitan ng Samsung Electronics at K4RAH165VB-BCQK sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RBH086VB-BCQK | K4RAH165VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organisasyon | 2G x 8 | — |
| Rate ng Data | 4800 Mbps | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V | 1.1 V |
| Interface | DDR5 (CA bus, ODECC) | — |
| On-die ECC | Yes | — |
| Packhaging | FBGA-82 | 106-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Refresh | [DATA_NEEDED: refresh rate 32ms/64ms] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency at 4800 Mbps] | — |
| Power Supply Rails | VDD/VDDQ 1.1 V (PMIC on module) | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | [DATA_NEEDED: tray or tape and reel standard quantity] | Tray |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Error Correction | — | On-die ECC |
| Mga Karakteristika | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Katayuan ng Lifecycle | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |