M29F160FB55N3E2 vs M29F160FT55N3E2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F160FB55N3E2 sa pamamagitan ng Micron Technology at M29F160FT55N3E2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48
M29F160FT55N3E2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F160FB55N3E2 | M29F160FT55N3E2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash - Parallel, Asynchronous | NOR Flash |
| Density | 16777 kbits (16 Mbit) | 16777 kbits |
| Organisasyon | 1 M x 16 / 2 M x 8 | — |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Interface | Parallel | Parallel |
| Boot Block | Bottom Boot Block (FB) | Top Boot Block |
| Programming Algorithm | Embedded byte/word program and erase controller | — |
| Temperature na Operasyon | -40 C to +125 C | -40C to +125C |
| Packhaging | 48-TSOP I | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Tindminan RoHS | ROHS3 Compliant | Compliant (E suffix) |
| Lead Free Status | Lead Free | — |
| Memory Organization | — | 16 Mbit (1 M x 16 / 2 M x 8) |
| Volte ng Pagbibigay | — | 5 V |
| Temperature Grade | — | Automotive Grade 3 |
| Bus Width | — | 8-bit / 16-bit selectable (BYTE# pin) |
| Program/Erase | — | Embedded program/erase controller (byte/word algorithms) |
| Factory Erase State | — | All bits erased to 1 |