M29F160FB55N3F2 vs M29W160ET70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F160FB55N3F2 sa pamamagitan ng Micron Technology at M29W160ET70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F160FB55N3F2 | M29W160ET70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | Parallel NOR Flash | NOR Flash (Parallel) |
| Density | 16777 kbits (16 Mbit) | — |
| Organisasyon | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 2M x 8 / 1M x 16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 70 ns |
| Volte ng Pagbibigay | 5 V | 3 V / 3.3 V (nominal) |
| Boot Block Architecture | Bottom Boot Block | — |
| Temperature na Operasyon | -40 to +125 C | [DATA_NEEDED: operating temperature range] |
| Interface | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Tindminan RoHS | Compliant (lead-free) | Compliant (E suffix) |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Laki ng Memory | — | 16 Mbit |
| Boot Block Location | — | Top boot |
| Packhaging | — | 48-TSOP |
| Automotive Qualification | — | AEC-Q100 qualified |
| Bus Width Selection | — | BYTE# pin, x8 or x16 |
| Sector Protection | — | Hardware boot block protection |
| Programming Type | — | Automatic program and erase |
| Packing | — | Tray (RoHS-compliant package, standard packing) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |