MPQ2222-TIN-LEAD vs MPQ2222 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPQ2222-TIN-LEAD sa pamamagitan ng Central Semiconductor at MPQ2222 sa pamamagitan ng Central Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ NakahandaCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Brand | Central Semiconductor | Central Semiconductor |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Configuration | Quad (4 independent NPN) | — |
| Uri ng Transistor | NPN Bipolar Junction Transistor (BJT) | — |
| Voltage ng Collector-Emitter (Vceo) | 40 V | — |
| Voltage ng Collector-Base (Vcbo) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Voltage ng Emitter-Base (Vebo) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Current na Pinakamataas ng Collector (Ic) | 500 mA | — |
| Power Dissipation | 650 mW | — |
| Dalas ng Transisyon (ft) | 200 MHz | 200 MHz |
| Packhaging | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | — |
| Molding Compound | EMC GREEN, halogen-free | — |
| Application | General purpose amplifier and switching | — |
| Equivalent Base Type | Quad 2N2222-type | — |
| Tindminan RoHS | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |