MPX2102DP vs MPX2100D Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPX2102DP sa pamamagitan ng NXP Semiconductors at MPX2100D sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP
MPX2102DP ⚠ Huling PagbiliNXP Semiconductors
MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro
MPX2100D ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPX2102DP | MPX2100D |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | Pressure Sensors | Pressure Sensors |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Type ng Sensor | Piezoresistive Pressure Sensor | — |
| Pressure Type | Differential (Dual Port) | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Supply Voltage (Excitation) | 10 V typical (max specified separately) | — |
| Port Size | Male, 0.19" (4.93 mm) tube, Dual | — |
| Hanay ng Temperature na Operasyon | -40 °C to +125 °C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Compensated Temperature Range | 0 °C to +85 °C | — |
| Packhaging / Kaso | 4-SIP Module (Unibody) | — |
| Termination Style | Through-Hole PCB | — |
| Type ng Output | Analog Wheatstone Bridge (ratiometric mV) | Analog ratiometric Wheatstone bridge (millivolts) |
| Technology | On-chip Temperature Compensated Silicon | Silicon piezoresistive MEMS strain-gauge bridge |
| Linearity | [DATA_NEEDED: typical linearity %FS] | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Sensitivity | [DATA_NEEDED: mV/V typical] | — |
| Uri ng Pagpapasok | Through-Hole, Dual Vertical Port | Through-hole SIP module |
| Series | MPX2102 | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Packhaging | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Tindminan RoHS | — | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |