MRF5S19060NBR1 vs MRF5S19060MR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S19060NBR1 sa pamamagitan ng NXP Semiconductors at MRF5S19060MR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF5S19060NBR1 ✓ NakahandaNXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF5S19060NBR1 | MRF5S19060MR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP (formerly Freescale Semiconductor) |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | N-Channel LDMOS RF Power MOSFET |
| Configuration | Dual Die (2 x N), Common Source | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| Packhaging | TO-272 WB-4 (overmolded plastic) | TO-270 WB-4 (Ceramic) |
| Uri ng Pagpapasok | Surface Mount (SMD) | Surface Mount / Flange Mount |
| Bilang ng Pin | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Part Number | — | MRF5S19060MR1 |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain Current (Id) | — | 750 mA |
| Output Power (Pout, avg) | — | 12 W (N-CDMA) |
| Output Power (Pout, PEP) | — | 60 W (typical) |
| Power Gain (Gps) | — | 14 dB (typical) |
| Drain Efficiency (etaD) | — | 45% (typical) |
| Operating Voltage | — | 28 V |
| Test Signal | — | 2 x N-CDMA |
| Operating Class | — | Class AB |