MRF5S9101MR1 vs MRF5S9101MBR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S9101MR1 sa pamamagitan ng NXP Semiconductors at MRF5S9101MBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRF5S9101MR1 | MRF5S9101MBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Uri ng Transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| Packhaging / Kaso | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 | TO-272 WB-4 |
| Uri ng Pagpapasok | Chassis / Flange Mount (through-hole flange) | Surface Mount |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| Tindminan RoHS | Compliant (lead-free N-suffix variants) | [DATA_NEEDED: RoHS compliance status] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +150C (TJ) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 17.5 dB (min, at 960 MHz, 26 V) |
| Test Drain Voltage (Vdd) | — | 26 V |
| Test Drain Current (Idq) | — | 700 mA |
| Drain-Source Voltage Rating (Vdss) | — | 68 V |
| Configuration | — | Single, Common Source |
| Maximum Power Dissipation | — | 427 W |
| Lead-Free / Terminal Finish | — | Tin-Lead (per Partstack listing) |
| Application Target | — | GSM / GSM EDGE Base Station Power Amplifiers |