MRF6S19060NR1 vs MRF6S19060NBR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S19060NR1 sa pamamagitan ng NXP Semiconductors at MRF6S19060NBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S19060NR1 MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP

MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP

MRF6S19060NR1 ✓ Nakahanda
NXP Semiconductors
MRF6S19060NBR1 MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272

MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272

MRF6S19060NBR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S19060NR1 MRF6S19060NBR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel LDMOS (RF Power) N-Channel RF Power MOSFET
Technology Lateral MOSFET, Enhancement Mode Lateral Enhancement-Mode MOSFET
Drain-to-Source Voltage (V DSS) 68 V —
Operating Drain Voltage (Test) 28 V —
Continuous Drain Current (I D) [DATA_NEEDED: ID max] —
Output Power (P AVG, N-CDMA) 12 W average —
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Test Frequency 1.93 GHz —
Power Gain (Gps) at Test 16 dB typical —
Drain Efficiency >30% typical at P3dB [DATA_NEEDED: drain efficiency]
Test Quiescent Current (I DQ) 610 mA —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: Vgs(th) value] —
Packhaging TO-270 WB-4 (4-lead over-molded plastic) TO-272 WB-4 (Wide-Body ceramic)
Uri ng Pagpapasok Surface Mount Surface Mount
Lead Free / RoHS Lead Free (per Freescale datasheet) —
Application N-CDMA, WCDMA, TDMA, CDMA base station amplifiers —
Drain-Source Voltage (VDS) — 28 V
Drain Current (ID) — 610 mA
Output Power (Average) — 12 W
Output Power (CW/Pulsed) — [DATA_NEEDED: CW/Pulsed peak power]
Power Gain — 16 dB typical at 1.93 GHz
Operating Mode — Class AB / Class C
ESD Protection — Yes (integrated)
Load Mismatch Tolerance — 5:1 VSWR (all phase angles)
Tindminan RoHS — Compliant
Lead Finish — [DATA_NEEDED: lead finish]
Temperature na Operasyon — -40C to +150C (TJ)

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