MRF6S19100HR3 vs MRF6S27085HR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S19100HR3 sa pamamagitan ng NXP Semiconductors at MRF6S27085HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Nakahanda
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S19100HR3 MRF6S27085HR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF6S27085HR3
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS Lateral DMOS (LDMOS)
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) —
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
Packhaging / Kaso NI-780H-2L (Case 465-06, Style 1) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
Uri ng Pagpapasok Flanged / Screw-mount with ceramic body Flange / Chassis mount with bolt-down thermal pad
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) —
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
Tindminan RoHS Compliant (per NXP product page) Compliant per Freescale/NXP material declaration
Uri ng Transistor — LDMOS, N-Channel, Enhancement-Mode, Lateral
Application — RF Power Amplifier
Operating Frequency — 2600 MHz to 2700 MHz
Test Frequency — 2.66 GHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Bilang ng Pin — 3 (Drain, Gate, Source)
Packaging — Tape & Reel (suffix HR3)

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