MRF6S21050LSR5 vs MRF6S21050LR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S21050LSR5 sa pamamagitan ng NXP Semiconductors at MRF6S21050LR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S21050LSR5 MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S

MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S

MRF6S21050LSR5 ✓ Nakahanda
NXP Semiconductors
MRF6S21050LR5 MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP

MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP

MRF6S21050LR5 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S21050LSR5 MRF6S21050LR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel RF Power MOSFET (LDMOS)
Technology LDMOS (Laterally Diffused MOSFET) HV6 LDMOS
Drain-Source Voltage (VDS) Maximum 65 V —
Gate-Source Voltage (VGS) Maximum [DATA_NEEDED: VGS max rating] —
Nominal Operating Drain Voltage 28 V —
Typical Operating Frequency 2.16 GHz (2110-2170 MHz W-CDMA band) —
Power Gain (Gps) 16 dB typical at 2.16 GHz —
Output Power (Pout) 11.5 W CW 11.5 W
Drain Current (ID) at Test 450 mA —
Packhaging / Kaso NI-400S (ceramic, 2-flange) NI-400 (ceramic flanged)
Uri ng Pagpapasok Surface Mount / Screw-Mount Flange mount, chassis-mount
Application W-CDMA, TDMA, CDMA, multicarrier base-station PA —
Configuration Single, Common Source Single N-channel
Tindminan RoHS Compliant Compliant (per distributor listing)
Lead-Free Yes —
Operating Mode Class AB —
MSL Rating [DATA_NEEDED: MSL level] —
Drain-Source Voltage (Vdss) — 28 V
Continuous Drain Current (Id) — 450 mA
Power Gain (Gp) — 16 dB at 2.16 GHz
Operating Frequency — 2.16 GHz (W-CDMA band)
Test Conditions — 2.16 GHz, 28 V, W-CDMA modulation
Input na Kapasitans — [DATA_NEEDED: input capacitance]
Output Kapasitansya — [DATA_NEEDED: output capacitance]
Thermal Resistance (Rthj-c) — [DATA_NEEDED: junction-to-case thermal resistance]
Hanay ng Temperature na Operasyon — -40C to +150C (junction)
Level ng MSL — Not applicable (ceramic flanged)
ESD Protection — Yes (integrated, per device family)

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