MRF6S27085HR3 vs MRF6S21100HR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S27085HR3 sa pamamagitan ng NXP Semiconductors at MRF6S21100HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Nakahanda
NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S27085HR3 MRF6S21100HR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6S27085HR3 —
Uri ng Transistor LDMOS, N-Channel, Enhancement-Mode, Lateral LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Application RF Power Amplifier —
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz —
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB 15.9 dB at 2.14 GHz
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
Packhaging / Kaso NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount —
Bilang ng Pin 3 (Drain, Gate, Source) —
Uri ng Pagpapasok Flange / Chassis mount with bolt-down thermal pad Surface Mount / bolt-down flange
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) —
Tindminan RoHS Compliant per Freescale/NXP material declaration [DATA_NEEDED: explicit RoHS compliance statement]
Configuration — Single
Frequency Band — 2.11 GHz to 2.17 GHz
Output Power (Average) — 23 W (W-CDMA, CW equivalent ~100 W PEP)
Drain-Source Voltage Rating (VDS max) — 68 V
Test Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 950 mA
Test Drain Current — 950 mA
Packhaging — NI-780H-2L (ceramic flange)
Maximum Power Dissipation (Abs) — 388 W
Operating Mode — Class AB (PCN/PCS/cellular, WLL, TD-SCDMA)
Terminal Position — Dual
Lead Free Status — [DATA_NEEDED: RoHS/lead-free explicit statement]

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