MRF6S9160HSR3 vs MRF6S9130HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S9160HSR3 sa pamamagitan ng NXP Semiconductors at MRF6S9130HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Huling PagbiliNXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6S9160HSR3 | MRF6S9130HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | 880 MHz |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | [DATA_NEEDED: drain efficiency figure] |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Packhaging | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Uri ng Pagpapasok | Flange / Chassis Mount with screw holes | Chassis / flange mount with screw-down |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Packhaging / Kaso | — | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Bilang ng Pin | — | 3 |
| Style | — | Style 1 |
| Technology | — | LDMOS (laterally diffused MOS) |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |