MRF6S9160HSR3 vs MRFE6S9160HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S9160HSR3 sa pamamagitan ng NXP Semiconductors at MRFE6S9160HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | MRF6S9160HSR3 | MRFE6S9160HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | 21 dB (typical at 880 MHz) |
| Drain Efficiency | 31% typical at 880 MHz | 31% (typical at 35 W avg.) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Packhaging | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | NI-780S (NI780HS) ceramic, bolted flange |
| Uri ng Pagpapasok | Flange / Chassis Mount with screw holes | Through-hole / chassis mount with flange |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Breakdown Voltage ng Drain-Source | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Tindminan RoHS | — | [DATA_NEEDED: confirm via latest distributor listing] |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |