MRF9030MBR1 vs MRF6S9045NR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF9030MBR1 sa pamamagitan ng NXP Semiconductors at MRF6S9045NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Nakahanda
NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF9030MBR1 MRF6S9045NR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) Freescale Semiconductor (acquired by NXP)
Part Family RF Sub-Micron MOSFET Line —
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode
Configuration Single, common-source —
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
Uri ng Pagpapasok Surface Mount (flanged ceramic) Surface Mount
Packhaging TO-272-2 (ceramic, 2-lead flanged) —
Maximum Dissipation (per Partstack) 139 W —
Level ng Sensitivity sa Asid ng Moisture (MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier 880 MHz Single-Carrier N-CDMA Base Station PA
Polarity / Channel Mode N-Channel, enhancement-mode —
Tindminan RoHS [DATA_NEEDED: RoHS compliance status from manufacturer page] —
Technology — Lateral MOSFET (RF Power)
Drain-Source Voltage (VDS) Rated — 68 V
Operating Drain Voltage (VDD) — 28 V (typical)
Continuous Drain Current (ID) — 10 uA (rated)
Quiescent Current (IDQ) — 350 mA
Output Power (Pout) — 10 W Avg.
Operating Frequency — 880 MHz (up to 1000 MHz)
Power Gain — 22.7 dB
Drain Efficiency — [DATA_NEEDED: typical efficiency percentage at Pout=10W]
Packhaging / Kaso — TO-270-2 (Case 1265-09, Style 1)
Lead-Free / RoHS — Yes (N suffix = lead-free terminations)
VSWR Ruggedness — Infinite VSWR at rated VDD

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