MRF9030MBR1 vs MRF6S9045NR1 比較
詳細並排比較 MRF9030MBR1 由 NXP Semiconductors 與 MRF6S9045NR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF9030MBR1 | MRF6S9045NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | Freescale Semiconductor (acquired by NXP) |
| Part Family | RF Sub-Micron MOSFET Line | — |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Configuration | Single, common-source | — |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| 安裝類型 | Surface Mount (flanged ceramic) | Surface Mount |
| 封裝 | TO-272-2 (ceramic, 2-lead flanged) | — |
| Maximum Dissipation (per Partstack) | 139 W | — |
| 濕度敏感等級 (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | 880 MHz Single-Carrier N-CDMA Base Station PA |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status from manufacturer page] | — |
| Technology | — | Lateral MOSFET (RF Power) |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Operating Frequency | — | 880 MHz (up to 1000 MHz) |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| 封裝 / 外殼 | — | TO-270-2 (Case 1265-09, Style 1) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |