MRFE6P9220HR3 vs MRFE6S9160HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRFE6P9220HR3 sa pamamagitan ng NXP Semiconductors at MRFE6S9160HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRFE6P9220HR3 | MRFE6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | 32.4% (typical, N-CDMA, 880 MHz) |
| Packhaging | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | — |
| Configuration | Common source, 2 elements | — |
| Uri ng Pagpapasok | Surface Mount with copper heatsink pad | Chassis / Flange mount (through-hole RF leads) |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max / operating range] | -40C to +150C (junction) |
| Lead Free Status | Lead Free | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Packhaging / Kaso | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| Level ng MSL | — | Not applicable (non-SMD air-cavity package) |