MRFE6P9220HR3 vs MRFE6S9160HR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRFE6P9220HR3 tarafından NXP Semiconductors ve MRFE6S9160HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRFE6P9220HR3 MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 ✓ Aktif
NXP Semiconductors
MRFE6S9160HR3 MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRFE6P9220HR3 MRFE6S9160HR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü LDMOS, N-Channel Enhancement-Mode, Lateral N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power MOSFET HV6E lateral MOSFET (LDMOS-like)
Frequency Range 865 MHz to 1000 MHz —
Test Frequency 880 MHz 880 MHz
Drain-Source Voltage (Vdss) Max 66 V —
Test Supply Voltage 28 V —
Test Drain Current 1.6 A —
Output Power (Avg, N-CDMA) 47 W —
Peak Output Power 200 W —
Power Gain (Typ) 20 dB at 880 MHz —
Drain Efficiency [DATA_NEEDED: typical drain efficiency % at 47 W avg] 32.4% (typical, N-CDMA, 880 MHz)
Paket NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount —
Configuration Common source, 2 elements —
Montaj Türü Surface Mount with copper heatsink pad Chassis / Flange mount (through-hole RF leads)
İşletim Sıcaklığı Aralığı [DATA_NEEDED: Tj max / operating range] -40C to +150C (junction)
Lead Free Status Lead Free —
RoHS Durumu Compliant Compliant
Manufacturer — NXP Semiconductors
Drain-Source Voltage (V DSS) — 70 V (max)
Drain Current (continuous) — [DATA_NEEDED: typical drain current at TC=25C]
Operating Frequency Range — 865 MHz to 960 MHz
Drain Supply Voltage (V DD) — 28 V (typical)
Output Power (Average) — 35 W (single-carrier N-CDMA, 880 MHz)
Output Power (PEP) — [DATA_NEEDED: PEP at specified conditions]
Power Gain (G ps / G p) — 21 dB (typical at 880 MHz)
Paket / Kas — NI-780H-2L (ceramic/metal air-cavity flange-mount)
Storage Temperature — [DATA_NEEDED: storage temperature]
Thermal Resistance (R thJC) — [DATA_NEEDED: thermal resistance junction-to-case]
Input Match — Internally matched input (broadband)
Lead-Free — Yes
MSL Seviyesi — Not applicable (non-SMD air-cavity package)

Dökümanlar & Kaynaklar

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