MT29F1G08ABAEAWP-IT:E vs K9F2808UOC-PCB0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT29F1G08ABAEAWP-IT:E sa pamamagitan ng Micron Technology at K9F2808UOC-PCB0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT29F1G08ABAEAWP-IT:E | K9F2808UOC-PCB0 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Laki ng Memory | 1 Gbit (128 MB) | — |
| Organisasyon | 128M x 8 | 16M x 8 bit |
| Interface | Parallel | — |
| Volte ng Pagbibigay | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 528 bytes (512 main + 16 spare) |
| Block Size | 128 KB | 16 pages (16 KiB + 256 spare bytes) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | — |
| Temperature na Operasyon | -40C to +85C | Commercial / Industrial (C, I grade) |
| Packhaging | TSOP-48 | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | — |
| Uri ng Memory | — | NAND Flash (SLC, Small-Page) |
| Memory Density | — | 128 Mbit (16M x 8) |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Access Time | — | 50 ns |
| Package Options | — | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | — | x8 |
| Command Set | — | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | — | R/B# open-drain ready/busy |
| Technology Node | — | Samsung 2nd-generation SLC NAND |
| Cell Type | — | Single-Level Cell (SLC) |
| Programming Model | — | Page program, block erase |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS status from Samsung datasheet] |