MT40A512M16TB-062E:R vs K4A8G085WB-BIWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16TB-062E:R sa pamamagitan ng Micron Technology at K4A8G085WB-BIWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT40A512M16TB-062E:R | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $60.00 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit (512M x 16) | 8 Gb |
| Rate ng Data | 3200 MT/s | 3200 Mbps |
| Clock Frequency | 1600 MHz | — |
| Latensya ng CAS | 22 | [DATA_NEEDED: CL value] |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Temperature na Operasyon | 0°C to +95°C | 0°C to +85°C |
| Packhaging | 96-FBGA (7.5x13 mm) | 78-FBGA |
| Interface | Parallel | — |
| Width ng Data Bus | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| Tindminan RoHS | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| Volte ng Pagbibigay | — | 1.2 V |
| Uri ng Pagpapasok | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |