MT40A512M16TB-062E:R vs K4A8G085WB-BIWE 比較
詳細並排比較 MT40A512M16TB-062E:R 由 Micron Technology 與 K4A8G085WB-BIWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ 啟用中
規格比較
| 參數 | MT40A512M16TB-062E:R | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $60.00 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) | 8 Gb |
| 資料速率 | 3200 MT/s | 3200 Mbps |
| Clock Frequency | 1600 MHz | — |
| CAS 延遲 | 22 | [DATA_NEEDED: CL value] |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 工作溫度 | 0°C to +95°C | 0°C to +85°C |
| 封裝 | 96-FBGA (7.5x13 mm) | 78-FBGA |
| 介面 | Parallel | — |
| 資料匯流排寬度 | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| 功能特色 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 狀態 | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| 供應電壓 | — | 1.2 V |
| 安裝類型 | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |