MT58L64L32FT-10 vs MT58L64L32PT7.5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT58L64L32FT-10 sa pamamagitan ng Micron Technology at MT58L64L32PT7.5 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
MT58L64L32FT-10 ✗ Tapus ng BuhayMicron Technology
MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron
MT58L64L32PT7.5 ✗ Tapus ng BuhayPagsanggunian na paghahambing
| Parametro | MT58L64L32FT-10 | MT58L64L32PT7.5 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Tapus ng Buhay |
| Uri ng Memory | SRAM - Synchronous Burst (Flow-Through SyncBurst) | SRAM - Synchronous (SYNCBURST Pipelined) |
| Laki ng Memory | 2 Mbit | 2 Mbit |
| Organisasyon | 64K x 32/36 (also 128K x 18) | 64K x 32 |
| Access Time | 10 ns | 4 ns |
| Maksimum na Taktiko ng Oras | 66 MHz | — |
| Interface | Parallel | Parallel |
| Supply Voltage VDD | 3.3 V (+0.3 V/-0.165 V) | — |
| Output Buffer Supply VDDQ | 2.5 V isolated or 3.3 V | — |
| Write Control | Individual BYTE WRITE enables | — |
| Standby Feature | SNOOZE MODE reduced-power standby | — |
| Data I/O | Common data inputs and data outputs | — |
| Burst Modes | Linear and interleaved burst address sequences | — |
| Packhaging | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +70C (commercial; -10IT variant industrial) | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Clock Frequency | — | 133 MHz |
| Supply Voltage Range | — | 3.135 V to 3.6 V |
| Lead Pitch | — | 0.5 mm |
| Memory Format | — | Volatile |
| I/O Type | — | LVTTL-compatible 3.3V |
| Manufacturer | — | Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing) |