NT5CB256M16CP-DII vs NT5CB256M16CP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CB256M16CP-DII sa pamamagitan ng Nanya Technology at NT5CB256M16CP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CB256M16CP-DII | NT5CB256M16CP-DI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Rate ng Data | DDR3L-1600 (PC3L-12800) | 1600 Mbps/pin (max) |
| Latensya ng CAS | CL11 | — |
| tCK (min) | 1.25 ns | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8, 4 (with burst chop) | — |
| Interface | SSTL-15 | — |
| Packhaging | 96-ball FBGA (9mm x 13mm) | TFBGA-96 |
| Hanay ng Temperature na Operasyon | -40C to +95C (industrial) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| Refresh Interval | 7.8us at 85C, 3.9us at 95C | — |
| RoHS | Compliant | Compliant |
| Volte ng Pagbibigay | — | 1.35 V (DDR3L) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Additive Latency | — | 0-13 |
| Lead-Free | — | Yes |
| Differential Clock Input | — | Yes (CK, CK#) |
| On-Die Termination (ODT) | — | Yes |