RTAX2000D-CQ352B vs RTAX2000D-1CQ352V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000D-CQ352B sa pamamagitan ng Microsemi at RTAX2000D-1CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX2000D-CQ352B RTAX2000D-1CQ352V
Brand Microsemi Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2000000 —
Logic Cells 29568 29,568
CLBs 19712 19,712
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) 1.425 V to 1.575 V (nominal 1.5 V)
Process Technology CMOS antifuse —
Configuration Type One-time programmable antifuse, live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Clocking Features Segmentable clocks, chip-wide highway routing —
Arithmetic Support Carry logic —
Packhaging CQFP-352 ceramic quad flat pack CQFP-352 (CQ352), ceramic
Screening / Speed Grade B (burn-in screening); D suffix = tighter ICCA limits at 125C final test —
Uri ng Pagpapasok Surface Mount Surface Mount
Application Domain Space-flight systems —
Radiation Tolerance Radiation-tolerant (TID/SEE per family datasheet) —
Tindminan RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: Operating Temperature]
I/O Supply Voltage [DATA_NEEDED: I/O Bank Supply Voltage] —
Maximum User I/O [DATA_NEEDED: Maximum User I/O Count] —
Equivalent Gates — 2,000,000
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Configuration — Live at power-up, single-chip, no external configuration device
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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