RTAX2000D-CQ352B vs RTAX2000D-1CQ352V השוואה
השוואה מפורטת זה לצד זה של RTAX2000D-CQ352B מאת Microsemi ו RTAX2000D-1CQ352V מאת Microchip Technology. השווה מפרטים עיקריים, פרמטרים חשמליים, אריזה, סטטוס מחזור חיים, תמחור וזמינות כדי לקבוע את הרכיב הטוב ביותר לדרישות העיצוב שלך.
Microsemi
RTAX2000D-CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000D-CQ352B ✓ פעילMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ פעילהשוואת מפרטים
| פרמטר | RTAX2000D-CQ352B | RTAX2000D-1CQ352V |
|---|---|---|
| מותג | Microsemi | Microchip Technology |
| קטגוריה | FPGA & CPLD | FPGA & CPLD |
| סטטוס מחזור חיים | פעיל | פעיל |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 | — |
| Logic Cells | 29568 | 29,568 |
| CLBs | 19712 | 19,712 |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | 1.425 V to 1.575 V (nominal 1.5 V) |
| Process Technology | CMOS antifuse | — |
| Configuration Type | One-time programmable antifuse, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Clocking Features | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Carry logic | — |
| מארז | CQFP-352 ceramic quad flat pack | CQFP-352 (CQ352), ceramic |
| Screening / Speed Grade | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test | — |
| סוג הרכבה | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per family datasheet) | — |
| סטטוס RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| טמפרטורת פעולה | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature] |
| I/O Supply Voltage | [DATA_NEEDED: I/O Bank Supply Voltage] | — |
| Maximum User I/O | [DATA_NEEDED: Maximum User I/O Count] | — |
| Equivalent Gates | — | 2,000,000 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |