RTAX250SL-CQ352V vs RTAX1000SL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250SL-CQ352V sa pamamagitan ng Microsemi at RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250SL-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microsemi | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 250000 gates | 1,000,000 |
| Logic Cells | 4224 | 18,144 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Process Technology | CMOS | 0.15 um CMOS |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Number of Inputs | 198 | — |
| Bilang ng Outputs | 198 | — |
| Total Terminals | 352 | — |
| Packhaging | CQFP-352 (CQ352) ceramic | 352-pin Ceramic CQFP (CQ352V) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Combinatorial Delay (max) | 0.93 ns | — |
| Operation | Live at power-up | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |