SCT4062KRC15 vs IMW120R045M1H Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng SCT4062KRC15 sa pamamagitan ng ROHM Semiconductor at IMW120R045M1H sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
ROHM Semiconductor
SCT4062KRC15 - 1200V 26A 62mΩ SiC MOSFET TO-247-4 | ROHM
SCT4062KRC15 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | SCT4062KRC15 | IMW120R045M1H |
|---|---|---|
| Brand | ROHM Semiconductor | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | ROHM Semiconductor | — |
| Product Family | 4th-Gen SiC Trench MOSFET | — |
| Uri ng Transistor | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (V_DSS) | 1200 V | — |
| Continuous Drain Current (I_D, Tc) | 26 A | — |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V | — |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max | — |
| Technology | Silicon Carbide (SiC), trench-gate | CoolSiC SiC Trench MOSFET |
| Packhaging | TO-247-4L (4-pin through-hole, Kelvin source) | PG-TO247-3-41 (TO-247-3) |
| Power Dissipation (P_D, Tc=25°C) | 115 W | — |
| Uri ng Pagpapasok | Through-Hole (THD) | Through Hole |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Configuration | Single N-Channel | Single N-channel with built-in body diode |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) | — |
| Short-Circuit Withstand | Yes (per datasheet) | — |
| Tindminan RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| Pwersang Pinahihigpit (Ptot) | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Qualification | — | Industrial grade |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Body Diode | — | Robust, suitable for synchronous rectification |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |