STS4DNF60L vs STS5DNF60L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng STS4DNF60L sa pamamagitan ng STMicroelectronics at STS5DNF60L sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ NakahandaPagsanggunian na paghahambing
| Parametro | STS4DNF60L | STS5DNF60L |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) | 4 A per channel | — |
| On-Resistance R_DS(on) (typ) | 0.045 Ω at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | < 0.055 Ω | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Total Power Dissipation (P_tot) | 2 W | — |
| Gate-Source Threshold Voltage | [DATA_NEEDED: V_GS(th) minimum/typical/maximum] | — |
| Gate Drive | Low threshold drive (logic-level compatible) | — |
| Packhaging | SO-8 (8-pin, surface mount) | SO-8 (8-SOIC, surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (junction) | [DATA_NEEDED: operating temperature min/max] |
| Technology | STripFET (strip-based, 2nd generation) | STripFET II trench N-channel |
| Number of Channels | 2 (dual N-channel on one die) | — |
| Level ng MSL | 1 per JEDEC J-STD-020 | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturing Process | STripFET "Single Feature Size" strip-based process | — |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at 25 °C | — | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | — | 35 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) value] |
| Gate Charge Q_g | — | [DATA_NEEDED: Q_g total gate charge value] |
| Configuration | — | Dual independent N-channel |
| Power Dissipation P_D (per datasheet) | — | 2 W |
| Automotive Grade | — | Automotive-grade qualified |
| RoHS Compliance | — | Compliant |
| Avalanche Rating | — | 100% avalanche tested |