IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon
MPN: IPD100N04S402ATMA1 ✓ NakahandaIPD100N04S402ATMA1 Ulas
A power MOSFET is a voltage-controlled semiconductor switch in the MOSFET, transistor, and discrete-semiconductor hierarchy. When driven above its threshold voltage, it permits low-loss current flow between drain and source; when off, it blocks the applied voltage. Its position in a DC-DC converter, motor-drive stage, battery system, or board-level power circuit determines the required switching speed, conduction loss, avalanche behavior, thermal performance, and package capability.
The verified source data identifies a single N-channel device with a built-in diode, 40 V drain-source rating, 100 A current capability, and 4.0 mΩ on-resistance. It is reported as AEC-Q101 qualified, 100% avalanche tested, RoHS compliant, and moisture-sensitivity level 1. The package supports a maximum operating temperature of 175°C and a peak-reflow rating of 260°C, subject to the complete manufacturer processing and handling requirements.
This low-voltage, low-RDS(on) device is intended for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power designs. The PG-TO252 package offers a large tab for heat spreading, but selected PCB copper still has a major effect on junction temperature and allowable switching duty cycle. Automotive qualification and avalanche testing make it relevant to robust low-voltage power paths, although final suitability still depends on load transients, gate drive, PCB construction, and thermal design.
For a new design, compare the 4.0 mΩ conduction rating with actual operating current and junction temperature rather than relying only on the 100 A headline value. Keep the drain-source voltage below 40 V, provide local gate-drive impedance and clamping as appropriate, and connect the tab to a substantial copper plane. Use the manufacturer datasheet for qualified pulse limits, SOA boundaries, gate-charge data, and exact ordering information.
Unlike a low-voltage drop regulator or a switching-regulator controller, this MOSFET does not regulate voltage by itself; it is the controlled switching element inside a power-conversion topology. Its low resistance can reduce conduction loss in a correctly sized current path, while the unenhanced off-state behavior requires suitable gate drive and source-reference design. The following selection notes, comparisons, and design cautions distinguish verified ratings from information not present in the supplied records.
Mga alternatibo na pwedeng ilagay na IPD100N04S402ATMA1 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok IPD100N04S402ATMA1 (parehas na form factor at footprint) — pagkakaiba sa Package.
IPD100N04S4L02ATMA1
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD100N04S4-02
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IRF3205STRLPBF
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →STP160NF06
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
BSC025N04LSG
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD100N04S402ATMA1 Mga Pinakamataas na Rating at Electrical Characteristics
| Channel Type | N-channel |
| Operating Mode | Enhancement mode |
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 100 A at Tc |
| Power Dissipation | 150 W at Tc |
| On-Resistance | 4.0 mΩ |
| Configuration | Single MOSFET with built-in diode |
| Packhaging | PG-TO252-3-313 surface-mount DPAK |
| Bilang ng Pin | 3 pins plus tab |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Testing | 100% avalanche tested |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 175°C |
| Peak Reflow Temperature | 260°C |
| Moisture Sensitivity Level | MSL1 |
| Tindminan RoHS | Compliant |
| Uri ng Pagpapasok | Surface mount |
| Package Body Material | Plastic/epoxy |
| JEDEC Package Code | TO-252 |
Gabay sa Pin Configuration ng IPD100N04S402ATMA1 to-252
Pin configuration para sa IPD100N04S402ATMA1 (to-252 package). Ang power device na ito ay may gate, drain, at source terminals. Para sa mga non-polarized package, sumangguni sa datasheet ng manufacturer para sa eksaktong oryentasyon ng pin 1 at mga detalye ng footprint. Kasama sa mga karaniwang aplikasyon ang disenyo ng power supply, motor driving, at load switching.
Wala ng detalyadong pinout data na magagamit para sa IPD100N04S402ATMA1.
Sumangguni sa datasheet para sa buong pin configuration.
Tipikal na mga Gamit
IPD100N04S402ATMA1 ay nararapat para sa 6 aplikasyons: Low-Voltage Motor Drives, Automotive Battery Systems, DC-DC Converter Switch Stages, Load-Control Power Paths, Battery Protection and Distribution, Board-Level Power Switching.
Low-Voltage Motor Drives
IPD100N04S402ATMA1 fits a 40 V N-channel switching leg in battery or automotive motor-control systems because the verified rating includes 100 A current capability at case temperature and 4.0 mΩ on-resistance. The low resistance can reduce estimated conduction loss during the on interval, but the 40 V limit leaves little margin for a 24 V bus with fast transients. Gate-drive voltage, dead time, switching frequency, motor inductance, and body-diode recovery must be verified from the full datasheet. The PG-TO252 tab should be tied to a broad copper pour, and the design must stay inside the device SOA.
Inirekomenda
Automotive Battery Systems
For a qualified 40 V automotive power path, IPD100N04S402ATMA1 offers AEC-Q101 qualification, 100% avalanche testing, and a 4.0 mΩ on-resistance in a surface-mount DPAK outline. Those attributes support low-loss battery switching when the transient voltage remains below 40 V and the PCB can remove the calculated heat. The 100 A value is specified at Tc, so ambient conditions and copper area remain decisive. Production engineers should also verify load dump, reverse-battery, short-circuit, ISO 7637, and transient requirements against the complete Infineon qualification package; none of those system-level tests is provided here.
Inirekomenda
DC-DC Converter Switch Stages
IPD100N04S402ATMA1 can serve as the high-side or low-side switch in a low-voltage DC-DC converter when its 40 V drain-source rating covers the worst-case input and ringing. The 4.0 mΩ on-resistance helps minimize estimated I²R conduction loss, while the 150 W Tc power-dissipation class provides a defined device-level limit for thermal analysis. Exact suitability depends on gate charge, switching energies, threshold voltage, output capacitance, avalanche rating, and SOA, all of which require the official datasheet. Place the gate driver close to the device and provide local drain/source loops to minimize switching-loop inductance.
Inirekomenda
Load-Control Power Paths
The 40 V, 100 A-at-case-temperature IPD100N04S402ATMA1 is suitable for resistive or inductive load-control switching where conduction efficiency is important and the switch is operated with proper gate drive. Its 4.0 mΩ resistance reduces estimated conduction loss compared with higher-resistance alternatives, but inductance can impose large turn-off voltage spikes that exceed the 40 V rating. Add a suitable gate clamp, snubber, or freewheeling path only after simulating worst-case load and layout parasitics. The DPAK tab and copper pour must be designed for the calculated thermal rise rather than the maximum headline current.
Inirekomenda
Battery Protection and Distribution
IPD100N04S402ATMA1 can be evaluated for reverse-current control, battery disconnect, or power-distribution functions where its N-channel topology, built-in diode, and low 4.0 mΩ on-resistance are useful. The built-in source-to-drain diode can create an unintended current path, so the circuit architecture must account for whether reverse blocking is required. The verified 100% avalanche testing is beneficial for rugged switching, but avalanche pulse energy and SOA boundaries are not supplied and must not be inferred from the 150 W power rating. Validate the complete switch path for startup, short circuit, thermal cycling, and automotive transients.
Inirekomenda
Board-Level Power Switching
For compact 40 V board-level power designs, IPD100N04S402ATMA1 combines surface-mount PG-TO252-3-313 packaging with a 4.0 mΩ on-resistance and 175°C maximum operating temperature. It can reduce conduction loss in a high-current branch while keeping assembly automated. However, the package is not a substitute for a complete thermal solution: tab copper, vias, board thickness, ambient temperature, and neighboring components determine performance. Confirm exact drain, source, gate, and tab connectivity in the manufacturer datasheet before layout because the supplied verified data does not provide a complete pin map.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for IPD100N04S402ATMA1 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | IPD100N04S4L02ATMA1 | IPD100N04S4-02 | IRF3205 | STP160NF06 | BSC025N04LSG |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | STMicroelectronics | Infineon Technologies |
Pangunahing mga Pagkakaiba
- Low verified on-resistance (kumpara saIPD100N04S4-02)
- Matched high-current power class (kumpara saIPD100N04S4L02ATMA1)
- Automotive qualification evidence (kumpara saIRF3205)
Talaan ng Disenyo
Estimated: using the verified 4.0 mΩ on-resistance, conduction loss is P = I²R. At 10 A this is 0.4 W; at 25 A it is 2.5 W. These are arithmetic estimates, not guaranteed operating points. Add switching and diode losses, then validate the resulting case and junction temperatures against the Infineon datasheet. Use the PG-TO252 tab with a broad, low-impedance copper pour and adequate thermal vias because the 100 A rating is specified at Tc.
Keep the drain and source current loop short and wide, and place the gate driver and gate-loop return close to the MOSFET to limit parasitic inductance. The verified 40 V rating leaves limited margin for switch-node ringing, so use low-ESR local capacitance and validate the worst-case layout with an oscilloscope. Do not rely on the built-in diode as a substitute for a deliberately designed reverse-blocking or freewheeling path.
Do not treat 100 A, 150 W, or 4.0 mΩ as independent guarantees. The 100 A value is specified at Tc, the 150 W value is also tied to Tc, and the 40 V maximum limits transient headroom. Before release, check gate voltage limits, threshold behavior, avalanche energy, SOA, body-diode recovery, and startup conditions in the official Infineon datasheet. The supplied records do not include those detailed curves.
Impormasyon ng Pagsunod sa Kautusan
The verified data identifies a RoHS-compliant green package and AEC-Q101 qualification. REACH, lead-free status, halogen-free status, and conflict-minerals status were not supplied.
