IPD100N04S402ATMA1 vs IRF3205STRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD100N04S402ATMA1 sa pamamagitan ng Infineon at IRF3205STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon
IPD100N04S402ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD100N04S402ATMA1 | IRF3205STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Channel Type | N-channel | — |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage | 40 V | — |
| Continuous Drain Current | 100 A at Tc | — |
| Power Dissipation | 150 W at Tc | — |
| On-Resistance | 4.0 mΩ | — |
| Configuration | Single MOSFET with built-in diode | — |
| Packhaging | PG-TO252-3-313 surface-mount DPAK | TO-263-3 (D2PAK) |
| Bilang ng Pin | 3 pins plus tab | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Testing | 100% avalanche tested | — |
| Minimum Operating Temperature | -55°C | — |
| Maximum Operating Temperature | 175°C | — |
| Peak Reflow Temperature | 260°C | — |
| Moisture Sensitivity Level | MSL1 | — |
| Tindminan RoHS | Compliant | — |
| Uri ng Pagpapasok | Surface mount | Surface Mount |
| Package Body Material | Plastic/epoxy | — |
| JEDEC Package Code | TO-252 | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Threshold na Voltage ng Gate | [DATA_NEEDED: gate threshold voltage] | — |
| Reverse-Biased Safe Operating Area | [DATA_NEEDED: SOA data] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |