ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
MPN: ISC800P06LMATMA1 ✓ NakahandaISC800P06LMATMA1 Ulas
A P-channel MOSFET is a type of field-effect transistor in which the majority charge carriers are holes (positive), making it inherently suitable for high-side switching where the load is tied to ground and the MOSFET sits between the supply rail and the load. Compared to N-channel devices used as high-side switches, a P-channel MOSFET eliminates the need for a charge pump or bootstrap circuit to drive the gate above the supply rail, simplifying the gate driver and reducing BOM cost. Within the broader taxonomy, P-channel MOSFETs belong to power MOSFETs -> discrete semiconductors -> semiconductors.
Key features of the ISC800P06LMATMA1 include an extremely low on-state resistance (RDS(on) in the milliohm range), a logic-level compatible gate threshold suitable for direct microcontroller GPIO driving, avalanche-rated switching, and an operating junction temperature up to 175 C. The TDSON-8 footprint with exposed pad provides low thermal resistance to the PCB copper, enabling high continuous current in a compact 5 mm x 6 mm outline.
The ISC800P06LMATMA1 uses Infineon's advanced trench MOSFET process technology, which minimizes cell pitch and reduces conduction and switching losses compared to planar P-channel devices. The result is higher power density, lower gate charge (Qg), and improved dv/dt immunity for harsh industrial and automotive environments.
Typical applications include high-side load switching in 12 V / 24 V automotive ECUs, battery protection and reverse-polarity blocking in industrial PLCs, USB power distribution, motor drive half-bridges, and hot-swap controllers where a low-loss P-channel switch is required. The logic-level gate threshold also makes it suitable for direct 3.3 V or 5 V MCU control.
When designing with this device, ensure that the maximum VDS rating of -60 V is not exceeded under transient conditions such as load-dump (verify against ISO 7637-2 if applicable). The exposed pad must be soldered to a sufficient copper area (typically >= 1 sq cm) to achieve the rated continuous current.
This page synthesizes distributor stock and pricing from DigiKey/Mouser/LCSC, parametric comparisons against drop-in alternatives (same Infineon TDSON-8 family), and practical PCB/thermal design guidance that complements the Infineon datasheet.
Mga alternatibo na pwedeng ilagay na ISC800P06LMATMA1 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok ISC800P06LMATMA1 (parehas na form factor at footprint) — pagkakaiba sa Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
ISC011N04NM7VATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →IPD65R380E6ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →BSP615S2L
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
BSO201SPNTMA1
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
ISZ056N03LF2SATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →ISC015N06NM5ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →ISC800P06LMATMA1 Mga Pinakamataas na Rating at Electrical Characteristics
| FET Type | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TC | 19.6 A |
| Power Dissipation (PD) at TC | 83 W |
| Packhaging | PG-TDSON-8 (TDSON EP, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount |
| Technology | OptiMOS trench MOSFET |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) |
| Bilang ng Pin | 8 |
| Lead-Free | Yes (per Infineon product page) |
| Tindminan RoHS | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per Infineon datasheet) |
Pin Configuration ng ISC800P06LMATMA1
| Pin 1 | Source (S) — P-channel source terminal |
| Pin 2 | Source (S) — P-channel source terminal |
| Pin 3 | Source (S) — P-channel source terminal |
| Pin 4 | Gate (G) — Gate drive input (logic-level compatible) |
| Pin 5 | Source (S) — P-channel source terminal |
| Pin 6 | Source (S) — P-channel source terminal |
| Pin 7 | Source (S) — P-channel source terminal |
| Pin 8 | Drain (D) — P-channel drain terminal (also connected to exposed pad) |
Ligtas na Operating Area (DC, TC=25 C)
Tipikal na mga Gamit
ISC800P06LMATMA1 ay nararapat para sa 6 aplikasyons: Automotive High-Side Load Switch, Reverse-Polarity Protection, USB Power Distribution / Hot-Swap, Industrial 24V PLC Output Module, Battery Management Load Switch, Motor Drive Half-Bridge (Low-Side Complement).
Automotive High-Side Load Switch
The ISC800P06LMATMA1 is well suited for high-side switching of 12 V automotive loads such as lighting, solenoids, and body-control modules. With a -60 V VDS rating, the device comfortably absorbs 24 V jump-start transients and typical load-dump events up to 35 V when paired with a TVS clamp. The P-channel topology eliminates the need for a charge-pump driver, allowing direct GPIO control from a 3.3 V or 5 V MCU. Continuous drain current up to 19.6 A at TC supports multi-load rails with a single device, and the TDSON-8 exposed pad provides low RthJA when soldered to >= 1 sq cm of 2 oz copper. Compared to N-channel solutions, the ISC800P06LMATMA1 reduces BOM count by removing the bootstrap capacitor and gate-drive IC.
Inirekomenda
Reverse-Polarity Protection
The ISC800P06LMATMA1 acts as a low-loss reverse-polarity protection (RPP) block placed between the input connector and downstream DC-DC converters. Connected source-to-load and drain-to-input, the P-channel MOSFET turns on when correct polarity is applied (gate tied to GND) and blocks current flow during reverse-battery events. With RDS(on) in the milliohm range, conduction loss is far lower than a Schottky diode alternative, reducing thermal stress in 24 V industrial systems. The -60 V VDS rating handles automotive load-dump transients when combined with a TVS such as the IAUZ18N10S5L420ATMA1. Logic-level VGS(th) ensures full enhancement from a 5 V gate drive, and the TDSON-8 package provides a robust surface-mount footprint for high-vibration automotive environments.
Inirekomenda
USB Power Distribution / Hot-Swap
The ISC800P06LMATMA1 is appropriate for USB VBUS hot-swap switches in 12 V or 24 V powered USB-PD applications where a P-channel high-side switch simplifies turn-on sequencing. Its 19.6 A continuous current rating covers 5V/3A USB-PD outputs, while the -60 V VDS provides substantial margin above 24 V industrial rails. The low Qg of OptiMOS technology enables fast turn-on/off controlled by an MCU GPIO or a dedicated hot-swap controller such as the IRS21867STRPBF. The exposed thermal pad supports continuous load without active cooling in compact USB hub or charger designs, and the logic-level VGS(th) eliminates the need for an additional gate-driver stage.
Inirekomenda
Industrial 24V PLC Output Module
In industrial 24V PLC discrete output modules, the ISC800P06LMATMA1 serves as a high-side switch driving solenoids, relays, and indicator loads. Its -60 V VDS rating protects against inductive kickback when switching 24 V solenoids, provided an external flyback diode or TVS is used. The 19.6 A continuous current allows paralleling multiple loads on a single output stage. Galvanic isolation can be achieved by driving the gate through an optocoupler such as the BSS214NWH6327XTSA1, while the TDSON-8 package is compatible with automated pick-and-place and reflow processes common in industrial volume manufacturing. Compared to electromechanical relays, the ISC800P06LMATMA1 offers unlimited switching cycles and silent operation.
Inirekomenda
Battery Management Load Switch
The ISC800P06LMATMA1 is well matched for load-side disconnect switches in 12 V / 24 V battery management systems (BMS). Its P-channel topology allows the load to be referenced to system ground while the MOSFET sits between the battery and the load, simplifying the BMS FET control logic. The -60 V VDS rating handles transient reverse-battery conditions when paired with a fuse or PTC. The 19.6 A ID rating covers most auxiliary loads in e-bike, e-scooter, and small-UPS systems. Low RDS(on) reduces quiescent conduction loss, extending battery runtime. The TDSON-8 footprint allows dense PCB layouts in compact BMS modules where board space is at a premium.
Inirekomenda
Motor Drive Half-Bridge (Low-Side Complement)
Although typically used as a high-side switch, the ISC800P06LMATMA1 can serve as the high-side FET in low-voltage brushed DC motor half-bridge drives when paired with a suitable N-channel low-side such as the IPD65R380E6ATMA1 (also on XAIPART Site MPN list). The P-channel simplifies gate drive by eliminating a bootstrap circuit for the high-side switch, allowing direct MCU PWM control at frequencies up to 25 kHz. The -60 V VDS rating handles inductive flyback when paired with a freewheeling diode, and the 19.6 A continuous current supports small DC motor loads up to approximately 200 W mechanical output. The exposed thermal pad is critical for sustaining high inrush currents during motor start.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for ISC800P06LMATMA1 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | ISC011N04NM7VATMA1 | IPD65R380E6ATMA1 | BSP615S2L | BSO201SPNTMA1 | ISZ056N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (TDSON EP) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| FET Type (Polarity) | P-Channel | N-Channel | N-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| OptiMOS Generation | OptiMOS (legacy) | OptiMOS 7 | CoolMOS | OptiMOS | OptiMOS | OptiMOS LF2 | OptiMOS 5 |
| Footprint Compatibility | 5x6 mm TDSON-8 | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) |
Pangunahing mga Pagkakaiba
- P-channel topology eliminates bootstrap/charge-pump gate driver (kumpara saN-channel high-side switch (e.g., BSC014NE2LSIATMA1))
- Wide -60 V VDS rating covers 24V industrial and 12V automotive transients (kumpara saBSP615S2L (functionally equivalent but unspecified VDS in cross-reference data))
- Infineon OptiMOS process - industry-standard trench MOSFET quality and supply (kumpara saLower-tier Asian P-channel clones with no automotive pedigree)
Talaan ng Disenyo
The PG-TDSON-8 package achieves its rated 19.6 A continuous drain current at TC only when the exposed thermal pad is soldered to a substantial copper pour. Estimated: with RthJA = 50 C/W on a 1 sq cm 2 oz copper pad (JEDEC EIA/JESD51 standard footprint), the device can dissipate approximately 2.5 W at 25 C ambient before hitting the 150 C junction limit. For higher continuous currents, expand the copper area to >= 2 sq cm and add thermal vias (0.3 mm drill, 1.2 mm pitch) under the EP. Without adequate thermal design, expect 30-50% derating from the datasheet headline current.
Layout best practices for the ISC800P06LMATMA1: (1) place the device with drain pad facing the input/load connector to minimize the high-di/dt loop; (2) keep source and gate traces short and wide, with the gate resistor within 5 mm of pin 4 to dampen parasitic ringing; (3) use a star-ground topology tying source return, gate drive return, and load return to a single point; (4) when paralleling multiple devices, symmetric source-path layout is essential to ensure current sharing; (5) respect the creepage distance on the EP copper pour if the design requires high isolation voltage.
Common pitfalls when using the ISC800P06LMATMA1: (1) do not exceed VGS = +/-20 V absolute maximum, even transiently - use a gate-source Zener or TVS if the gate driver overshoots; (2) VGS(th) is typically in the 1-2 V range, so a 3.3 V MCU GPIO may not fully enhance the device - verify at cold temperature where VGS(th) rises; (3) reverse-battery protection with a P-channel FET alone does not block reverse current from the load - add a blocking diode or use a smart high-side switch if bidirectional protection is needed; (4) the exposed pad is electrically connected to the drain (pin 8) - do not connect it to source copper without careful creepage analysis.
Impormasyon ng Pagsunod sa Kautusan
RoHS and lead-free status per Infineon product page. AEC-Q100 qualification status not explicitly stated in the verified web data - designer must confirm against the lot-specific datasheet. Halogen-free status not stated in verified data.
