K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
MPN: K3KL9L90DM-JGCT ✓ NakahandaK3KL9L90DM-JGCT Ulas
LPDDR (Low Power Double Data Rate) SDRAM is a class of DRAM optimized for power-sensitive systems such as smartphones, tablets, edge-AI accelerators, and automotive infotainment. Sitting within the memory IC hierarchy (DRAM -> SDRAM -> LPDDR family -> LPDDR5X), LPDDR5X devices use a low-voltage interface, deep power-down modes, and advanced bank architectures to maximize bandwidth-per-watt.
Key characteristics of this device include its 16Gbit density per package, FBGA-315 surface-mount package, and an operating temperature range documented at -25C to +85C for family devices. The LPDDR5X interface supports channelized architecture and dynamic voltage/frequency scaling for workload-adaptive power management.
Technically, LPDDR5X devices implement CA training, DFE (decision feedback equalization) on data reads, and link ECC options to sustain multi-gigabit-per-second signaling on PCB traces. Signal integrity on fly-by command/address buses and length-matched data lanes are critical to achieving rated speeds.
Typical applications include flagship smartphone application-processor memory, automotive ADAS domain controllers, AI edge inference modules, and high-performance mobile computing platforms such as tablets and XR headsets.
Design consideration: LPDDR5X routing requires strict length matching and impedance control; consult the Samsung LPDDR5X design guide and SoC memory-controller initialization sequences before layout.
This page synthesizes verified distributor data, family cross-references, and practical design notes not found in a single datasheet source.
Mga alternatibo na pwedeng ilagay na K3KL9L90DM-JGCT — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok K3KL9L90DM-JGCT (parehas na form factor at footprint) — pagkakaiba sa Package, Density, Interface, Product Status, Memory Type.
K3KL9L90DM-MGCU
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →K3KL8L80DM-JGCT
✅ Drop-In ⚠️ Mga Talaan Hindi NaiwerikmoMagkontak para sa presyo
Tingnan ang Datasheet →K3KL2L20DM-JGCT
✅ Drop-In ⚠️ Mga Talaan Hindi NaiwerikmoMagkontak para sa presyo
Tingnan ang Datasheet →K3KL9L90CM-MGCT
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →K3KL8L80DM-MGCU
✅ Drop-In ⚠️ Mga Talaan Hindi NaiwerikmoMagkontak para sa presyo
Tingnan ang Datasheet →K3KL5L50QM-JGCT
✅ Drop-In ⚠️ Mga Talaan Hindi NaiwerikmoMagkontak para sa presyo
Tingnan ang Datasheet →K3KL9L90DM-JGCT Mga Pinakamataas na Rating at Electrical Characteristics
| Uri ng Memory | LPDDR5X SDRAM |
| Density | 16 Gbit |
| Packhaging | FBGA-315 |
| Uri ng Pagpapasok | Surface Mount |
| Temperature na Operasyon | -25C to +85C |
| Tindminan RoHS | Compliant |
Gabay sa Pin Configuration ng K3KL9L90DM-JGCT fbga-315
Pin configuration para sa K3KL9L90DM-JGCT (fbga-315 package). Kasama sa digital IC na ito ang GPIO, mga communication interface (UART, SPI, I2C), at mga power pin. Sumangguni sa datasheet ng manufacturer para sa mga alternatibong function ng pin at mga opsyon sa configuration. Mahalaga para sa disenyo ng embedded system at PCB layout.
Wala ng detalyadong pinout data na magagamit para sa K3KL9L90DM-JGCT.
Sumangguni sa datasheet para sa buong pin configuration.
Tipikal na mga Gamit
K3KL9L90DM-JGCT ay nararapat para sa 6 aplikasyons: Flagship Smartphone Memory, Automotive ADAS Domain Controllers, Edge AI Inference Modules, Tablets and XR Headsets, 5G Modems and Connectivity Platforms, Industrial Vision and Machine Inspection.
Flagship Smartphone Memory
The K3KL9L90DM-JGCT fits flagship smartphone memory subsystems where the application processor demands multi-gigabyte-per-second bandwidth at strict power budgets. Samsung's LPDDR5X platform reaches data rates up to 8.5 Gbps with approximately 20% better power efficiency than LPDDR5, directly extending battery life during sustained camera, gaming, and 5G workloads. The 16 Gbit device density allows multi-chip PoP (Package-on-Package) stacking alongside the SoC. In use, the memory controller initializes CA training and DFE equalization to sustain top speed bins, while dynamic frequency scaling drops the interface to idle during standby, leveraging LPDDR5X deep sleep states. Thermal design must account for DRAM power dissipation under PoP thermal paths.
Inirekomenda
Automotive ADAS Domain Controllers
Samsung markets its LPDDR5X family for automotive devices, making the K3KL9L90DM-JGCT a candidate for ADAS domain controllers and centralized compute platforms that fuse camera, radar, and LiDAR sensor streams. The -25C to +85C operating range documented for family parts covers cabin-domain environmental requirements. Bandwidth matters: multi-sensor perception pipelines at high resolution require the 8.5 Gbps-class signaling LPDDR5X offers, while the 20% power-efficiency gain versus LPDDR5 reduces cooling burden in sealed ECUs. Designers must confirm AEC-Q100 qualification and PPAP documentation for this exact ordering part number with Samsung, and validate memory-controller initialization sequences against the automotive SoC's supported speed bins before production release.
Inirekomenda
Edge AI Inference Modules
Edge-AI accelerators running vision and language models are memory-bandwidth-bound, and the K3KL9L90DM-JGCT's LPDDR5X interface provides the multi-Gbps data rates those models demand without desktop-class DRAM power. The 16 Gbit capacity suits model weights and activation buffers in the low-GB range typical of quantized edge deployments. Samsung's roughly 20% efficiency improvement over LPDDR5 translates directly into longer thermal-limited inference duty cycles in fanless enclosures. Implementation uses wide x32/x64 channel configurations with CA training to sustain top bins; multi-channel controllers can aggregate several devices. Compared with LPDDR4-based modules, LPDDR5X delivers substantially higher aggregate bandwidth at similar channel counts, improving tokens-per-second and frames-per-second metrics.
Inirekomenda
Tablets and XR Headsets
High-resolution tablet displays and XR (VR/AR) headsets combine demanding render pipelines with battery-only operation - exactly the profile LPDDR5X was engineered for. The K3KL9L90DM-JGCT supplies the 16 Gbit working set for high-refresh-rate graphics, while the platform's up-to-8.5 Gbps signaling supports the sustained bandwidth needed for dual-eye high-resolution rendering and low-motion-to-photon latency. The 20% power-efficiency advantage over LPDDR5 is decisive for headset thermal comfort, since passive cooling dominates industrial design. The FBGA-315 package supports compact layouts near the application processor, shortening flight-time-critical traces. Multi-device channel aggregation is standard in these platforms; follow SoC vendor layout guidelines for length matching and power-domain sequencing.
Inirekomenda
5G Modems and Connectivity Platforms
5G baseband processors moving multi-gigabit air-interface data require memory bandwidth that keeps pace with modem throughput; the K3KL9L90DM-JGCT's LPDDR5X interface provides this at low standby power, critical for always-on cellular connectivity. Samsung's LPDDR5X delivers up to 8.5 Gbps per the official product page, sufficient for mmWave-class data paths, while deep power-down states minimize drain between burst transfers - a key metric for battery-powered CPE and mobile hotspots. The -25C to +85C operating range supports outdoor customer-premises equipment. In deployment, the modem memory controller typically runs conservative speed bins with strict power-supply noise budgets; follow Samsung and SoC vendor guidance on VDDQ decoupling to protect signal integrity at speed.
Inirekomenda
Industrial Vision and Machine Inspection
Industrial machine-vision inspection systems stream multiple high-frame-rate camera feeds into inference pipelines, making memory bandwidth the system bottleneck. The K3KL9L90DM-JGCT addresses this with LPDDR5X-class throughput (family rates up to 8.5 Gbps per Samsung) and 16 Gbit of working memory for frame buffers and neural inference. The -25C to +85C documented operating range tolerates factory-floor ambient swings inside sealed enclosures. Compared with DDR4-based industrial SODIMM designs, an LPDDR5X soldered-down FBGA solution saves board space, eliminates socket reliability issues, and improves bandwidth-per-watt in fanless systems. Design attention focuses on power integrity at speed bins, CA training stability across temperature, and confirming the SoC memory controller's support for LPDDR5X initialization sequences.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for K3KL9L90DM-JGCT — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | K3KL9L90DM-MGCU | K3KL8L80DM-JGCT | K3KL9L90CM-MGCT | K3KL2L20DM-JGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 | FBGA-315 | FBGA | FBGA-315 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Density | 16 Gbit | 16 Gbit | 8 Gbit | 64 Gb | 2 Gbit |
Pangunahing mga Pagkakaiba
- Top-tier platform bandwidth (kumpara saK3KL8L80DM-JGCT)
- Published distributor pricing availability (kumpara saK3KL9L90CM-MGCT)
- Power efficiency advantage over prior generation (kumpara saLPDDR5-class alternatives)
Talaan ng Disenyo
LPDDR5X signaling at multi-Gbps data rates demands rigorous PCB constraints: length-match data lanes within group skew budgets, control impedance (typically 40-60 ohm ODT-dependent), and reference solid ground planes under all DQ/DBI lines. CA training compensates command/address flight-time skew, but excessive trace mismatch consumes training range margin. Follow the SoC vendor's memory layout guide in combination with Samsung's LPDDR5X design rules; route the fly-by CA bus per controller topology and simulate eye diagrams on lengths beyond 50 mm.
LPDDR5X uses separate core (VDD), I/O (VDDQ), and VDD2 power domains with dynamic voltage and frequency scaling. Estimate power dissipation from the DRAM's IDD specifications for your actual speed bin and read/write mix - do not size rails on worst-case numbers alone. Decouple VDDQ with low-ESR ceramic capacitors placed within 2-3 mm of ball vias; PDN impedance must stay flat across the tens-of-MHz to hundreds-of-MHz range where read bursts draw current. Verify DVFS rail transient response with the power-management IC during speed transitions.
FBGA-315 memory cannot be reworked or swapped after assembly without BGA reballing equipment, so part-number suffix verification (JGCT vs MGCU vs other speed-bin codes) must happen at BOM release, not at rework. Confirm the exact speed bin against your memory controller's qualified list - LPDDR5X initialization sequences differ per bin. Also confirm AEC-Q100 and PPAP documentation early for automotive builds; consumer-grade suffixes may not carry automotive qualification even when temperature ranges look adequate.
Impormasyon ng Pagsunod sa Kautusan
JLCPCB lists the sibling part K3KL9L90DM-MGCU as ROHS. REACH, halogen-free, and conflict-minerals declarations not found in provided data; request formal compliance certificates from Samsung or authorized distributors.
