K3KL8L80DM-JGCT - 32Gb LPDDR5X DRAM FBGA-315 | Samsung
MPN: K3KL8L80DM-JGCT ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $100.87 | $100.87 |
| 10 | $95.83 | $958.30 |
| 100 | $90.78 | $9,078.00 |
| 500 | $85.74 | $42,870.00 |
| 1,000 | $80.7 | $80,700.00 |
Drop-in alternatives for K3KL8L80DM-JGCT — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K3KL8L80DM-MGCU
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View Datasheet →K3KL8L80CM-MGCT
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View Datasheet →K3KL8L80EM-MGCU
✅ Drop-In📋 Reference alternative (not in catalog)
K3KL9L90CM-MGCT
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$36.91 / Unit
View Datasheet →K3KL7L70EM-MGCU
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$12 / Unit
View Datasheet →K3KL8L80DM-JGCT Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Type | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) |
| Organization | x32 |
| Package | FBGA-315 (315-ball BGA) |
| Data Rate | Up to 7500 Mbps (family up to 8.5 Gbps) |
| Interface | LPDDR5X (JEDEC LPDDR5-compatible, low-power SDRAM) |
| Supply Rails | 500 mV / 900 mV / 1.05 V / 1.8 V |
| Operating Temperature | -25C to +85C |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (family figure) |
| Mounting Type | Surface Mount (BGA) |
| Application Domains | Mobile, PC, automotive, on-device AI |
| RoHS Status | Compliant |
K3KL8L80DM-JGCT [data_needed: package body dimensions in mm] Pin Configuration Guide
Complete pinout information for K3KL8L80DM-JGCT ([data_needed: package body dimensions in mm] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package body dimensions in mm] package pinout diagram for K3KL8L80DM-JGCT](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K3KL8L80DM-JGCT.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KL8L80DM-JGCT is suitable for 6 applications: Flagship Smartphone Main Memory, On-Device AI Inference, Automotive Infotainment and ADAS, Compact PC and Edge Computing Modules, Tablets and 2-in-1 Devices, Networking and Edge Server Accelerators.
Flagship Smartphone Main Memory
The K3KL8L80DM-JGCT's 32 Gbit x32 LPDDR5X configuration is a direct fit for flagship smartphone SoC main memory, where multi-gigabit bandwidth feeds CPU clusters, GPUs, and image signal processors. Its FBGA-315 package supports the compact stacking and PoP-style board strategies used in mobile layouts, while the LPDDR5X power envelope (0.5 V class VDDQ) directly extends battery life. Samsung's family data cites up to 8.5 Gbps and roughly 20-25% better efficiency than LPDDR5, which matters most during sustained camera burst capture and on-device model inference. Designers should co-train speed bins with the SoC controller and reserve thermal headroom near the PMIC for the 1.8 V and 1.05 V rails.
Recommended
On-Device AI Inference
On-device AI workloads are memory-bandwidth bound, and the K3KL8L80DM-JGCT addresses this with up to 7,500 Mbps data rates and an x32 interface that maximizes per-package bandwidth in a single die. Samsung explicitly positions LPDDR5X for on-device AI, where the ~25% power-efficiency gain over LPDDR5 reduces thermal throttling during sustained transformer inference. The 4 GB per-die density supports quantized multi-billion-parameter models with headroom for the OS. In NPU-centric designs, place the die close to the SoC with length-matched DQ routing under strict skew budgets, and enable deep-sleep modes between inference bursts to exploit the LPDDR5X low-power states for idle-power reduction.
Recommended
Automotive Infotainment and ADAS
Automotive cockpit and ADAS platforms use LPDDR5X for high-resolution displays, surround-view camera fusion, and navigation, and Samsung markets LPDDR5X for automotive devices. The documented -25 C to +85 C operating range on the same-die K3KL8L80CM variant covers most cabin and near-engine electronics environments. A 4 GB die per package enables stacked configurations for digital-cluster plus infotainment SoCs. For production, confirm the -JGCT ordering code carries the required automotive qualification level per Samsung's ordering table; infotainment is the typical entry application while safety domains may require Samsung's dedicated automotive LPDDR5X codes with full AEC-level validation.
Recommended
Compact PC and Edge Computing Modules
Thin-and-light laptops, mini PCs, and SFF edge modules increasingly adopt LPDDR5X soldered memory for bandwidth and power gains over DDR4/DDR5 SODIMM designs. The K3KL8L80DM-JGCT's FBGA-315 surface-mount footprint lets board designers place 4 GB per die directly under or beside the SoC, freeing the mechanical envelope otherwise consumed by sockets and slots. With 7,500 Mbps-class operation, integrated GPUs gain bandwidth that directly lifts graphics and AI performance. Designers must commit to memory-on-board (no field upgrade), so qualify at least two same-footprint Samsung variants and implement comprehensive boot-time training coverage across process, voltage, and temperature corners.
Recommended
Tablets and 2-in-1 Devices
Tablets balance peak performance against passive-cooling constraints, making the K3KL8L80DM-JGCT's efficiency profile valuable: 4 GB per die in x32 LPDDR5X at 0.5 V class VDDQ delivers desktop-class bandwidth without a fan. Multi-display multitasking, 120 Hz panels, and on-device photo/video processing all scale with memory bandwidth, which the LPDDR5X generation supplies via higher data rates rather than higher power. Its -25 C to +85 C range covers enclosed handheld environments. Layout should prioritize VDDQ plane integrity and dense decoupling near the ball field, and firmware should exploit per-bank refresh and self-refresh entry during idle periods to minimize standby drain.
Recommended
Networking and Edge Server Accelerators
Edge gateways, 5G baseband cards, and inference accelerators at the network edge use LPDDR5X where DDR5 power budgets are too high. The K3KL8L80DM-JGCT supplies 4 GB of low-latency working memory per die, and multiple dies can be banked to scale capacity while keeping per-watt bandwidth high - Samsung cites up to 8.5 Gbps family operation and ~20% efficiency gain over LPDDR5. In fanless outdoor enclosures, the reduced heat load directly improves reliability. Route memory as point-to-point to the SoC, apply the controller's LPDDR5X training algorithms across temperature, and monitor die temperature via the device's temperature sensor features for adaptive throttling policy.
Recommended
Recommended Products Summary
Engineering reference data for K3KL8L80DM-JGCT — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL8L80DM-MGCU | K3KL8L80CM-MGCT | K3KL8L80EM-MGCU | K3KL9L90CM-MGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 - same | FBGA-315 - same | FBGA-315 - same | FBGA-315 family - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit (4 GB) | 32 Gbit | 36 Gbit |
| Organization | x32 | x32 | x32 | [DATA_NEEDED] | [DATA_NEEDED] |
| Data Rate | [DATA_NEEDED: exact -JGCT speed bin] | [DATA_NEEDED] | Up to 7500 Mbps | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature | -25C to +85C (family) | [DATA_NEEDED] | -25C to +85C | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Supply Rails | 500 mV / 900 mV / 1.05 V / 1.8 V | 500 mV / 900 mV / 1.05 V / 1.8 V | 500 mV / 900 mV / 1.05 V / 1.8 V | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- LPDDR5X power efficiency (vs LPDDR5-generation K3KL-family parts)
- Same-footprint second-source options (vs K3KL8L80DM-MGCU / K3KL8L80CM-MGCT)
- 32 Gbit monolithic density in x32 organization (vs K3KL7L70EM-MGCU (lower density family member))
Design Notes
At LPDDR5X data rates (7,500 Mbps class), DQ/CA routing requires length matching with skew budgets of only a few picoseconds, controlled-impedance traces (40-60 ohm), and unbroken reference planes under every signal group. Follow the SoC memory controller vendor's LPDDR5X routing guideline for fly-by clock and CA topology. Estimated: at these edge rates even a 5 mm stub can degrade eye margins, so avoid via stubs on DQ lines or back-drill where necessary.
The device uses multiple rails (500 mV / 900 mV / 1.05 V / 1.8 V classes per Samsung family data). Sequence VDD1/VDD2 before VDDQ per the LPDDR5X power-up procedure and use PMIC rails with fast transient response for VDDQ, since refresh and read bursts create high di/dt. Estimated: a 4 GB die at full bandwidth can draw several hundred milliamps on VDDQ with sub-microsecond transients, demanding low-ESL decoupling and nearby bulk capacitance. Verify rail sequencing order in the controller's power-up checklist.
Do not substitute speed-grade suffixes without verifying controller training coverage: LPDDR5X controllers qualify specific speed bins at boot, and a C/D/E binning difference within the K3KL8L80 family (e.g., K3KL8L80CM-MGCT vs -DM-JGCT) can exceed a validated operating point. Also confirm the ordering-code decode with Samsung's official ordering-information table rather than broker descriptions, as third-party listings frequently conflate suffix letters.
Compliance Information
ROHS compliance stated in distributor listing (JLCPCB for same-die variant K3KL8L80CM-MGCT). REACH, halogen-free and conflict-minerals declarations not present in retrieved data - obtain from Samsung environmental documentation.
