6EDL04N03PRXUMA1 vs 6EDL04N02PRXUMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 6EDL04N03PRXUMA1 tarafından Infineon ve 6EDL04N02PRXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre 6EDL04N03PRXUMA1 6EDL04N02PRXUMA1
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Driver Type Three-phase gate driver (6-channel half-bridge) —
Number of Drivers 6 —
Çıkış Konfigürasyonu Non-inverting half-bridge —
Supply Voltage (VDD) 10 V to 25 V —
Logic Supply Voltage (VSS) 3.3 V / 5 V —
Output Current (Source) 0.24 A —
Output Current (Sink) 0.375 A —
Artış Süresi 60 ns (typical at 1 nF load) —
Düşüş Süresi 26 ns (typical at 1 nF load) —
Bootstrap Diode Integrated (3 channels) Integrated (BSD) on all 3 high-side drivers
Over-Current Protection Yes (adjustable threshold via ITRIP) Yes (single-shunt, ITRIP/CIN pin)
Fault Output Yes (open-drain) —
Etkin Pin Yes (EN, active-high) —
Propagation Delay [DATA_NEEDED: propagation delay] —
İşletim Sıcaklığı -40 C to +125 C —
Paket PG-TSSOP-25 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 3 MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS Durumu Compliant Compliant
Blocking Voltage 200 V / 600 V family —
Product Type — 3-Phase Gate Driver IC
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
İşletim Sıcaklığı Aralığı — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

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