IAUCN04S7L042GATMA1 vs IAUCN04S7L009ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN04S7L042GATMA1 tarafından Infineon ve IAUCN04S7L009ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifInfineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUCN04S7L042GATMA1 | IAUCN04S7L009ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Paket | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-34 (TDSON EP) |
| Montaj Türü | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +175C (Tj) | -55 °C to +175 °C (Tj) |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | 1 |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Part Number | — | IAUCN04S7L009ATMA1 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | — | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | — | 175 A |
| Power Dissipation (Pd, Tc=25°C) | — | 129 W |
| Rds(on) Max @ Vgs=10V | — | 0.91 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Automotive Qualification | — | AEC-Q101 qualified |