IAUCN04S7L042GATMA1 vs IAUCN04S7L009ATMA1 比較

詳細並排比較 IAUCN04S7L042GATMA1 由 Infineon 與 IAUCN04S7L009ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IAUCN04S7L042GATMA1 IAUCN04S7L009ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封裝 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-34 (TDSON EP)
安裝類型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
工作溫度範圍 -55C to +175C (Tj) -55 °C to +175 °C (Tj)
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 1
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Part Number — IAUCN04S7L009ATMA1
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Automotive Qualification — AEC-Q101 qualified

資料表與資源

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