IRF7313TRPBF vs IRF9952TRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF7313TRPBF tarafından Infineon ve IRF9952TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF7313TRPBF IRF9952TRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET / Fifth Generation HEXFET
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
İşletim Sıcaklığı Aralığı -55C to +150C (junction) -55C to +150C (junction)
Paket 8-pin SOIC (SO-8) surface mount 8-pin SOIC (SO-8), surface mount
Montaj Türü Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL Seviyesi 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Polarity / Configuration — Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) — 30 V
P-Channel VDS (Drain-Source Voltage) — -30 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
N-Channel R_DS(on) max — 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max — 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) — 2 W
RoHS Durumu — Compliant (Pb-free, indicated by PBF suffix)
Tape and Reel Packaging — Yes (TRPBF suffix)
Qualification — Consumer market

Dökümanlar & Kaynaklar

Tüm Ürünleri Gözden Geçir BOM Oluştur Teklif İsteyin