IRF7313TRPBF vs IRF9952TRPBF 比較

詳細並排比較 IRF7313TRPBF 由 Infineon 與 IRF9952TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF9952TRPBF IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF ✓ 啟用中

規格比較

參數 IRF7313TRPBF IRF9952TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET / Fifth Generation HEXFET
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
工作溫度範圍 -55C to +150C (junction) -55C to +150C (junction)
封裝 8-pin SOIC (SO-8) surface mount 8-pin SOIC (SO-8), surface mount
安裝類型 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 等級 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Polarity / Configuration — Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) — 30 V
P-Channel VDS (Drain-Source Voltage) — -30 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
N-Channel R_DS(on) max — 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max — 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) — 2 W
RoHS 狀態 — Compliant (Pb-free, indicated by PBF suffix)
Tape and Reel Packaging — Yes (TRPBF suffix)
Qualification — Consumer market

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