IRFB4110PBF vs IRF1405PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFB4110PBF tarafından Infineon ve IRF1405PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFB4110PBF | IRF1405PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | — |
| Paket | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Technology | HEXFET (planar DMOS) | HEXFET (Stripe Planar cell structure) |
| Montaj Türü | Through Hole | Through Hole |
| RoHS Durumu | Compliant (Pb-free suffix) | PbF suffix indicates lead-free / RoHS compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Qualification | — | JEDEC qualified, optimized for switching below 100 kHz |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |