IRFR5410TRRPBF vs IRFR5305TRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFR5410TRRPBF tarafından Infineon ve IRFR5305TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFR5410TRRPBF | IRFR5305TRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | HEXFET fifth-generation planar MOSFET |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | -31 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | 205 mΩ | 65 mΩ |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| İşletim Jant Sıcaklığı | -55C to +150C | -55C to +175C |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | Yes (Pb-free, suffix "PBF") |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |