IRFZ48NPBF vs IRF640NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ48NPBF tarafından Infineon ve IRF640NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ48NPBF | IRF640NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 44.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | -55C to +150C |
| Paket | TO-220AB (through-hole) | TO-220AB (through-hole, 3-pin) |
| Montaj Türü | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (5th Generation) |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS Durumu | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Transistor Türü | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |