IRLR3410TRLPBF vs IRLR3410TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR3410TRLPBF tarafından Infineon ve IRLR3410TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR3410TRLPBF | IRLR3410TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Montaj Türü | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| MSL Seviyesi | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Power Dissipation (Pd) at Tc=25C | — | 79 W |
| On-Resistance RDS(on) max | — | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | — | Logic-level (drive ~4.5V) |
| İşletim Sıcaklığı Aralığı | — | -55C to +175C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Drain Tab Connection | — | Tab electrically tied to Drain |
| Polarity | — | N-Channel enhancement mode |