MRF6S19200HR5 vs MRFE6S9200HR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S19200HR5 tarafından NXP Semiconductors ve MRFE6S9200HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF6S19200HR5 | MRFE6S9200HR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | LDMOS | N-Channel LDMOS (RF Power) |
| Technology | RF Power MOSFET | Enhancement-mode LDMOS (HV6E) |
| Drain-Source Voltage (Vds) Max | 66 V | — |
| Test Voltage (Vds) | 28 V | — |
| Test Current (Ids) | 1.6 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Power Gain (Typ) | 17.9 dB | — |
| Output Power (Pout) | 56 W (CW) | — |
| Paket | NI-780H-2L (ceramic flange) | NI-880H-2L ceramic air-cavity |
| Montaj Türü | Flange / Screw Mount | Chassis / flange mount, SMD variant 5.08 mm height |
| Operating Mode | Class AB, Class C | Class AB, Class C, Doherty |
| Application | CDMA base station, multicarrier amplifiers | — |
| Input Matching | Internal (broadband) | — |
| Lead Free Status | Yes | Lead Free (per datasheet) |
| RoHS Durumu | Compliant | Compliant |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Target Application | — | W-CDMA base-station final stage |