MRF9030MBR1 vs MRF6S9045NBR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF9030MBR1 tarafından NXP Semiconductors ve MRF6S9045NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Aktif
NXP Semiconductors
MRF6S9045NBR1 MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors

MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors

MRF6S9045NBR1 ✓ Aktif

Özellik Karşılaştırması

Parametre MRF9030MBR1 MRF6S9045NBR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) NXP Semiconductors (formerly Freescale)
Part Family RF Sub-Micron MOSFET Line —
Transistor Türü N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET
Configuration Single, common-source Single, common-source
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
Montaj Türü Surface Mount (flanged ceramic) Surface Mount (flange/ceramic)
Paket TO-272-2 (ceramic, 2-lead flanged) —
Maximum Dissipation (per Partstack) 139 W —
Nem Hassasiyet Seviyesi (MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier —
Polarity / Channel Mode N-Channel, enhancement-mode —
RoHS Durumu [DATA_NEEDED: RoHS compliance status from manufacturer page] Compliant
Technology — Lateral DMOS, RF power
Operating Frequency — Up to 1000 MHz (typical 880 MHz)
Drain-Source Voltage (V DSS min) — 68 V
Typical Operating Drain Voltage (V DD) — 28 V
Quiescent Drain Current (I DQ) — 350 mA
Output Power (P out avg) — 10 W
Power Gain (G ps) — 22.7 dB at 880 MHz
Drain Efficiency (η D) — [DATA_NEEDED: drain efficiency %]
Maximum Power Dissipation (P D max) — 175 W
Paket / Kas — NI-880H-2L (TO-272-2 variant)
İşletim Sıcaklığı — [DATA_NEEDED: junction/storage temperature range]
MSL Seviyesi — [DATA_NEEDED: MSL rating]
Lead-Free — Yes

Dökümanlar & Kaynaklar

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