MRFE6S9046NR1 vs MRFE6S9046GNR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRFE6S9046NR1 tarafından NXP Semiconductors ve MRFE6S9046GNR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRFE6S9046NR1 MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 ✓ Aktif
NXP Semiconductors
MRFE6S9046GNR1 MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 ✓ Aktif

Özellik Karşılaştırması

Parametre MRFE6S9046NR1 MRFE6S9046GNR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9046NR1 MRFE6S9046GNR1
Transistor Türü LDMOS, N-Channel Enhancement-Mode Lateral N-Channel Enhancement-Mode Lateral MOSFET
Frequency Range 920 MHz to 960 MHz —
Output Power (CW) 35.5 W typical at 960 MHz, 28 V —
Power Gain 19 dB typical at 960 MHz —
Drain-Source Voltage (Vds max) 66 V rated —
Operating Drain Voltage 28 V nominal —
Test Current (Quiescent) 300 mA —
Paket / Kas TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold
Pin Sayısı 5 (Drain, Gate, Source x2, NC) —
Montaj Türü Surface Mount / Flange Mount Surface Mount (Gull-wing leads)
Application GSM / GSM EDGE base station, CDMA, multicarrier amplifier —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
RoHS Durumu Compliant (per DigiKey listing) Compliant (lead-free)
Lead-Free Status Lead Free (per distributor data) —
Technology — HV6E lateral MOSFET
Frequency Band — 920 to 960 MHz
Test Frequency — 960 MHz
Drain Voltage (VDD) — 28 V (typical)
Output Power (Pout, CW) — 35.5 W
Power Gain (Gp) — 19 dB
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Quiescent Drain Current (IDQ) — 300 mA
Input Bias Voltage Range — [DATA_NEEDED: VGS range]
İşletim Sıcaklığı Aralığı — [DATA_NEEDED: operating temp range]
Storage Temperature Range — [DATA_NEEDED: storage temp range]
Nem Hassasiyet Seviyesi (MSL) — [DATA_NEEDED: MSL rating]
Klorürsüz — [DATA_NEEDED: halogen-free status]

Dökümanlar & Kaynaklar

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