MW7IC2040NBR1 vs MW7IC2220NBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC2040NBR1 tarafından NXP Semiconductors ve MW7IC2220NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ AktifNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC2040NBR1 | MW7IC2220NBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Besleme Gerilimi | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | — |
| Paket / Kas | TO-272-16 Variant, Flat Leads | — |
| Montaj Türü | Surface Mount | Surface Mount (flange/over-molded) |
| Technology | RF LDMOS (later-generation, on-chip matching) | RF LDMOS (Laterally Diffused MOSFET) |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| RoHS Durumu | Compliant (per ETEI / distributor data) | — |
| Fonksiyon | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |